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Due to the challenging design rule and CD control requirements of the lOOnm device generation, a large number of complex patterning techniques are likely to be used for random logic devices [ 1] . The complexity of these techniques places considerable strain upon model-based OPC software to identify and compensate for a wide range of printing non-idealities [2]. Additionally, the rapidly increasing cost of advanced reticles has increased the urgency of obtaining reticles devoid of process limiting design or OPC errors. We have evaluated the capability of leading edge model-based OPC software to meet the challenging lithography needs of the lOOnm device generation. Specifically, we have implemented and verified model usefulness to correct for pattern deformation in complex binary gate, contact and via processes utilizing highly optimized illumination. Additionally, we present results showing the abilities of model-based methods to accurately find design related printing problems in complementary phase shift gate designs before they are committed to an expensive reticle. ii. IntroductionCurrently in early 2002, leading semiconductor manufacturers are starting pilot-line production of test circuits for the lOOnm technology generation and actively planning development for the 7Onm technology generation. Both of these generations will be accomplished with high numerical aperture (NA) 193nm lithography as the main patterning strategy. The main lithographic challenges of these generations are the lack of linearity (low ki processes); the low depth of focus (DOF) which accompanies high-NA illumination use; the complexity of reticle erthancement technology (RET) or scanner illumination which improves DOF & linearity; and the extremely high cost of ownership (COO) for the leading edge tools necessary to handle these challenges. Other difficult challenges include the relative immaturity of 193nm photoresists, the rising cost (& cycletime) of sophisticated high-end reticles, and the need for complex postprocessing techniques to alter final etched CD values [1,2]. These are difficult problems to overcome before these technologies can be made into working and cost-effective manufacturing processes. The main strategy for overcoming or reducing these problems is the use of optical proximity correction (OPC) methods. The goal of this work is to evaluate the effectiveness of model-based OPC (MBOPC) methods for solving critical patterning problems of the lOOnm technology generation.

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