Organic-inorganic metal-halide perovskites (e.g. CH3NH3PbI3-xClx) emerged as a promising opto-electronic material. However, the Shockley-Queisser Limit for the power conversion efficiency (PCE) of perovskite-based photovoltaic devices has still not been reached, which was attributed to non-radiative recombination pathways, as suggested by photoluminescence (PL) inactive (or dark) areas on perovskite films. Although these observations have been related to the presence of ions/defects, the underlying fundamental physics and detailed microscopic processes, concerning trap/defect status, ion migration, etc., still remain poorly understood. Here we utilize correlated wide-field PL microscopy and impedance spectroscopy (IS) on perovskite films to in-situ investigate both the spatial and temporal evolution of these PL inactive areas under external electrical fields. We attribute the formation of PL inactive domains to the migration and accumulation of iodine ions under external fields.Hence we are able to characterize the kinetic processes and determine the drift velocities of these ions. In addition, we show that I2 vapor directly affects the PL quenching of a perovskite film, which provides evidence that the migration/segregation of iodide ions plays an important role in the PL quenching and consequently limits the PCE of organometal halide based perovskite photovoltaic devices.

Inorganic-organic halide organometal perovskites have demonstrated very promising performance for opto-electronic applications, such as solar cells, light-emitting diodes, lasers, single-photon sources, etc. However, the little knowledge on the underlying photophysics, especially on a microscopic scale, hampers the further improvement of devices based on this material. In this communication, correlated conventional photoluminescence (PL) characterization and wide-field PL imaging as a function of time are employed to investigate the spatially-and temporally-resolved PL in CH 3 NH 3 PbI 3−x Cl x perovskite films. Along with a continuous increase of the PL intensity during light soaking, we also observe PL blinking or PL intermittency behavior in individual grains of these films. Combined with significant suppression of PL blinking in perovskite films coated with a phenyl-C61-butyric acid methyl ester (PCBM) layer, it suggests that this PL intermittency is attributed to Auger recombination induced by photoionized defects/traps or mobile ions within grains. These defects/traps are detrimental for light conversion and can be effectively passivated by the PCBM layer. This finding paves the way to provide a guideline on the further improvement of perovskite opto-electronic devices.

Organolead halide perovskite solar cells (PSCs) have generated extensive attention recently with power conversion efficiency (PCE) exceeding 23%. However, these PSCs exhibit photoinduced instability in the course of their current-voltage measurements. In this work, we study the light-induced behavior in CH3NH3PbI3−xClx films in situ, by employing wide-field photoluminescence (PL) microscopy to obtain both the spatially and temporally resolved PL images simultaneously. Along with the increase in the PL intensity under continuous illumination, some areas render PL inactive. By characterizing the excitation energy dependent long-time PL decay behavior, we suggest that the PL quenching can be ascribed to a localized accumulation of iodide ions driven by the optical field. This ion localization leads to an enhancement of non-radiative recombination. The appearance of the PL inactive areas in the perovskite film impedes its photovoltaic device performance approaching the theoretical maximum PCE. Therefore, the herein presented real-time investigation of the light soaking of perovskite films is a versatile and adaptable method providing more details to improve the performance of PSCs.