Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ) 2 (acac)] are studied by time-resolved electroluminescence measurements. A transient overshoot after voltage turn-off is found, which is attributed to electron accumulation on Ir(MDQ) 2 (acac) molecules. The mechanism is verified via impedance spectroscopy and by application of positive and negative off-voltages. We calculate the density of accumulated electrons and find that it scales linearly with the doping concentration of the emitter. Using thin quenching layers, we locate the position of the emission zone during normal OLED operation and after voltage turn-off. In addition, the transient overshoot is also observed in three-color white-emitting OLEDs. By time-and spectrally resolved measurements using a streak camera, we directly attribute the overshoot to electron accumulation on Ir(MDQ) 2 (acac). We propose that similar processes are present in many state-of-the-art OLEDs and believe that the quantification of charge carrier storage will help to improve the efficiency of OLEDs.

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Current-voltage measurements were used to study the electrical and hydrogen sensing characteristics of Pd Schottky contacts fabricated on ZnO. The ZnO films were grown on doped GaAs by MOCVD. By utilizing the GaAs substrate as a low resistance contact to the ZnO film, a remarkably low series resistance of the diodes was achieved. After exposure of the Schottky diodes to a hydrogen ambient, the current at reverse bias increased, indicating the sensitivity to hydrogen gas. In contrast to previous reports, the contacts are able to recover fully at room temperature. Annealing studies in hydrogen ambient show stability of these contacts up to temperatures of 150 • C.

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