Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.
Although this is a study from urban areas in England, its findings may have wider significance since we have found that resources and professional skills may be more important than organizational arrangements in collaborative working between disciplines. Primary Care Trusts in England and Wales should promote awareness of these different perspectives, perceived risks and conflict minimization strategies in their work on clinical governance and professional development.
Low-pressure metalorganic chemical vapor deposition (MOCVD) of aluminum using triethylamine alane (TEAA) is reported. This liquid source combines the chemical advantages of adduct precursors such as solid trimethylamine alane (TMAA), with the processing and handling advantages of liquid precursors such as triisobutyl aluminum (TIBA). High-purity Al films were deposited on TiN and thin in situ evaporated Cu and Ti films, which serve as activators for nucleation of Al. The electrical resistivities of the Al films on TiN were close to the 3 μΩ cm of sputtered Al. In the case of depositions on Cu, the Cu diffuses readily into the Al and serves to improve the electromigration resistance of the latter. The Al deposition rates using TEAA are 2–4 times those using TIBA at 250 °C, although the TEAA process is not fully optimized at this point and further work is needed to improve the film morphologies.
Excimer laser photolysis of organoaluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. The process exhibits good spatial selectivity and patterns with 4 μm resolution have been accurately reproduced. Patterned Al metallizations have been performed on Si, SiO2, Al2O3, and GaAs substrates and show promise for practical applications. Electrical measurements probing Al/substrate interface quality indicate that this technique may be suitable for the fabrication of rectifying contacts on GaAs.
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