Controlled growth of nanowires is an important, emerging research field with many applications in, for example, electronics, photonics, and life sciences. Nanowires of zinc blende crystal structure, grown in the <111>B direction, which is the favoured direction of growth, usually have a large number of twin-plane defects. Such defects limit the performance of optoelectronic nanowire-based devices. To investigate this defect formation, we examine GaP nanowires grown by metal-organic vapour-phase epitaxy. We show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of the nanowires. We discuss these findings in a nucleation context, where we present an idea on how the twin planes form. This investigation contributes to the understanding of defect formation in nanowires. One future prospect of such knowledge is to determine strategies on how to control the crystallinity of nanowires.

We present results of ideal epitaxial nucleation and growth of III−V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III−V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superlattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.

Abstract. Drought monitoring and early warning (M &amp; EW) systems are a crucial component of drought preparedness. M &amp; EW systems typically make use of drought indicators such as the Standardised Precipitation Index (SPI), but such indicators are not widely used in the UK. More generally, such tools have not been well developed for hydrological (i.e. streamflow) drought. To fill these research gaps, this paper characterises meteorological and hydrological droughts, and the propagation from one to the other, using the SPI and the related Standardised Streamflow Index (SSI), with the objective of improving understanding of the drought hazard in the UK. SPI and SSI time series were calculated for 121 near-natural catchments in the UK for accumulation periods of 1–24 months. From these time series, drought events were identified and for each event, the duration and severity were calculated. The relationship between meteorological and hydrological drought was examined by cross-correlating the 1-month SSI with various SPI accumulation periods. Finally, the influence of climate and catchment properties on the hydrological drought characteristics and propagation was investigated. Results showed that at short accumulation periods meteorological drought characteristics showed little spatial variability, whilst hydrological drought characteristics showed fewer but longer and more severe droughts in the south and east than in the north and west of the UK. Propagation characteristics showed a similar spatial pattern with catchments underlain by productive aquifers, mostly in the south and east, having longer SPI accumulation periods strongly correlated with the 1-month SSI. For catchments in the north and west of the UK, which typically have little catchment storage, standard-period average annual rainfall was strongly correlated with hydrological drought and propagation characteristics. However, in the south and east, catchment properties describing storage (such as base flow index, the percentage of highly productive fractured rock and typical soil wetness) were more influential on hydrological drought characteristics. This knowledge forms a basis for more informed application of standardised indicators in the UK in the future, which could aid in the development of improved M &amp; EW systems. Given the lack of studies applying standardised indicators to hydrological droughts, and the diversity of catchment types encompassed here, the findings could prove valuable for enhancing the hydrological aspects of drought M &amp; EW systems in both the UK and elsewhere.

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We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.