An improved analysis of low frequency trapping noise in a MOS device is proposed. This analysis takes into account the supplementary fluctuations of the mobility induced by those of the interface charge. It enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations. The outputs given by the Hooge mobility fluctuation model are also presented and discussed with respect to those obtained by the carrier number fluctuation model. In particular, the impact of the channel length or channel width, and the model type on the input gate voltage and drain current noise characteristics is studied and compared to typical experimental data. Finally, a procedure for the diagnosis of the low frequency noise sources in a MOS transistor is proposed.

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