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This paper presents the impact of process variations in carbon nanotube based advanced bus interconnects such as single walled carbon nanotube (SWCNT), multi walled carbon nanotube (MWCNT) and mixed carbon nanotube bundle (MCB). The impact of temperature variations on paracitics of interconnects for variable interconnects at different technology nodes is analyzed. From the analysis, it reveal that the mixed bundle carbon nanotube offering the lower paracitics even higher temperatures compared to SWCNT and MWCNT which leads to lower delay and crosstalk effect when it is used in bus interconnects. Further we have also done delay analysis by changing the bundle area, number of shells and metallic ratio of three interconnect structures with the insertion of obtained parasitics using empirical formulas. It is proven that the mixed CNT (MCB) interconnect structures offered a lesser delay compared to other CNT interconnect structures. All the analysis has been done using MATLAB at 22nm and 32nm technology nodes.

This research paper presents a novel approach to analyze the crosstalk-induced delay of multi-layered graphene nanoribbon (MLGNR) and multi-walled carbon nanotube (MWCNT) interconnects. A multi-line driver-interconnect-load (DIL) system is employed to analyze the crosstalk-induced delay for different switching transitions. The interconnect lines of the proposed DIL are said to be operated by either a resistive or a CMOS, or a CNFET driver for different switching transitions at 32-nm technology. Using the unique CNFET driver, the victim line of the multi-level MLGNR/MWCNT-based bus system experiences a delay almost 57.25% and 31.62% lesser in comparison to a resistive driver and a CMOS interconnect driver, respectively. Additionally, the overall worst-case delays are reduced by 89.45% and 98.98% for MLGNR in comparison to an equivalent MWCNT at 100[Formula: see text][Formula: see text]m and 1,000[Formula: see text][Formula: see text]m interconnect lengths, respectively.

The cumulative increase of resistivity in copper due to scaling and indispensable requirements of high current densities and unprecedented switching speed are the impelling forces behind the continuous investigation towards the new wiring solution for nanometer circuits and systems. Mixed carbon nanotube bundle (MCB) interconnects are the most optimistic solution that can address the challenges faced by the conventional materials and thereby enhances the lifetime of electrical interconnects. The reliability of the MCB structures are investigated by calculating the propagation delay and power dissipation. The delays and peak crosstalk noise are examined from the transient analysis for all the bundle structures considered in the present study. Further to improve the data rates and performance, CNTFET based ternary logic system is encompassed for MCB interconnects. Active shielding technique is incorporated effectively for minimizing the crosstalk effects. Finally, modelling of the mixed CNT bundle is done under the influence of temperature and the temperature sensitive crosstalk noise effects are investigated for CNTFET based active shielded MCB structures. Encouragingly, it is observed that, the crosstalk effects are lessened to a greater extent for the MCB structure wherein SWCNT’s are placed at the centre and MWCNT’s at the periphery.