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A serious of glass samples according to the formula (100−x) (0.5 Li 2 O−0.2Ga 2 O 3 −0.3P 2 O 5 )+x SeO 2 (x=0, 2, 4, 6, 8, 10 and 12 mol%), labeled as LGPS x (x is the mole percent of SeO 2 ) were synthesized through melt quenching technique. Glass transition temperature T g and Hurby's parameter for the prepared LGPS samples were characterized by DSC Traces. FTIR and Raman spectra indicated that SeO 2 acts as either glass modifier (SeO 3 2− ) or glass former (SeO 4 2− ) as the composition of SeO 2 changes. The best bulk conductivity, the highest conductivity is achieved by the LGPS 10 sample (σ=1.605×10 −6 S/cm, at 303 K). The variation of conductivity with frequency of glass samples was explained in the light of different oxidation states of selenium ions. The super curve in the scaling analysis suggesting the temperature independent relaxation phenomenon.

Glass samples of the system (100 -x) (0.5 Li 2 O-0.2Al 2 O 3 -0.3P 2 O 5 ) ? xSeO 2 (x is ranging from 0 to 12 mol%, labeled as LAPS x ) were prepared using the melt quenching technique. FTIR spectral studies indicate that selenium ions mostly occupy network modifying sites due to isolated selenite (SeO 3 2-) groups up to 6 mol% of SeO 2 (LAPS 6 ) in the LAPS glass network. This has a tremendous effect on the electrical properties. Glass forming ability parameter (K gl ) and the glass transition temperature (T g ) of LAPS samples were characterized by DTA traces. Electrical measurements were carried out as a function of frequency and temperature over the frequency range of 10 Hz to 10 6 Hz and a temperature range of 303-423 K. The electric modulus formalism was applied to study the relaxation behavior using the impedance data for all the samples at 303 K and also for analyzing the relaxation behavior of the highest conducting sample (6 mol% of SeO 2 ) at different temperatures. An attempt has been made to relate the measured properties to the structural modifications due to the modifying effect of isolated selenite (SeO 3 2-) groups in the glass network.

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