Coherent twin boundaries form periodic lamellar twinning in a wide variety of semiconductor nanowires, and are often viewed as near-perfect interfaces with reduced phonon and electron scattering behaviors. Such unique characteristics are of practical interest for high-performance thermoelectrics and optoelectronics; however, insufficient understanding of twin-size effects on thermal boundary resistance poses significant limitations for potential applications. Here, using atomistic simulations and ab-initio calculations, we report direct computational observations showing a crossover from diffuse interface scattering to superlattice-like behavior for thermal transport across nanoscale twin boundaries present in prototypical bulk and nanowire Si examples.Intrinsic interface scattering is identified for twin periods ≥ 22.6 nm, but also vanishes below this size to be replaced by ultrahigh Kapitza thermal conductances. Detailed analysis of vibrational modes shows that modeling twin boundaries as atomically-thin 6H-Si layers, rather than phonon scattering interfaces, provides an accurate description of effective cross-plane and in-plane thermal conductivities in twinning superlattices, as a function of the twin period thickness.3