Wearable antennas have grown in popularity in recent years as a result of their appealing features and prospects to actualize lightweight, compact, low-cost and adaptable wireless communications and surroundings. These antennas have to be conformal and made of lightweight materials in a low-profile arrangement when attached to various parts of the human body. Near-body operation of these antennas should be possible without degradation. When these characteristics are taken into account, the layout of wearable antennas become challenging, especially when textile substrates are investigated, high conductivity materials are used during manufacturing procedures and body binding scenarios have an impact on the design's performance. Several of these issues arise in the context of body-worn deployment, despite modest changes in magnitude between implementations. This paper examines the multiple issues and obstacles encountered in the construction of wearable antennas as well as the range of materials used, and the Specific Absorption Rate (SAR) effects employed as well as the bending scheme. An overview of the innovative features and their separate approaches to addressing the difficulties lately raised by work in this field conducted by the scientific community is provided as an appendix.
This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By applying this frequency selection element in both input and output matching networks constructed with microstrip line, tri-band matching network is realized. With our proposed frequency selection element, we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. To demonstrate our method, we fabricate a tri-band power amplifier that can work at 1 GHz, 1.5 GHz, and 2.5 GHz concurrently. Experimental results show that the output power is 39.8 dBm, 40.8 dBm, and 39.2 dBm with 56.4%, 58.3%, and 43.4% power added efficiency (PAE) at 1 GHz, 1.5 GHz and 2.5 GHz, respectively.Keywords-multi-band; resonator; matching network; power amplifier; power added efficiency I.
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