In this work, the electrical characteristics of organic thin film transistors with stacked and surface‐treated organic gate dielectrics have been studied. PVP Polyvinylphenol, polystyrene, stacked PVP‐polystyrene and polystyrene‐PVP were used as gate insulator layers, respectively. The electrical characteristics of the devices with four gate insulator structures were measured and compared with each other for the best structure of gate dielectric layer. Also, for the better device performance, the photoalignment technique was used. Being applied to gate dielectric layers of organic TFTs, it might provide preferential orientation and grain size of pentacene molecules, which would be deposited on the gate insulator PVP surface previously exposed to the linearly polarized UV light LPUVL to enhance the TFT characteristics [1, 2].

A new AMOLED compensation pixel circuit is proposed to improve the short term image sticking problem due to the hysteresis characteristics of p-Type ASPC TFTs. A 3.9-inch AMOLED display was developed based on proposed compensation circuit. The experimental and SPICE simulation results show the high performance of the hysteresis compensation.

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a‐Si:H TFT backplane based AMOLED with a real time brightness compensation circuit is presented. The brightness of AMOLED is automatically adjusted by the thermal sensor and temperature compensation system with feedback algorithm. By using this compensation circuit, the brightness differences over the temperature range −20 °C and 60 °C is reduced by 550cd/m2 to 30cd/m2.