No abstract

High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor species as a function of geometric location and temperature by analyzing outlet closing in TMS-based HTCVD under the conditions of 2000°C for 1-2 hours with a Si/H ratio of 6.2 × 10 −4 . Thermodynamic estimation of the classified reaction zones was experimentally verified by micro-Raman spectroscopy and microscopic inspections. 3148 | CrystEngComm, 2015, 17, 3148-3152 This journal isFig. 1 (a) Schematic of HTCVD reactor design used in this study. (b) Conceptual drawing of the reaction zones in the HTCVD reactor.