Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (~30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2(±) fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14,700 cm(3) V(-1) s(-1). The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

The temperature dependent electrostrictive effect, with respect to increasing the cooling rate to a cooling temperature, was quantitatively investigated in potassium tantalate niobate (KTN) lead-free single crystals above and near Curie temperature (TC). High work-function Pt electrodes are used to minimize the effect of charge injection, and the electric field induced displacement was measured with Michelson interferometry. It was found that a giant electrostrictive coefficient of 696 × 10−16 m2/V2 could be obtained at a high cooling rate of 0.75 °C/s to a temperature of TC + 4.5 °C due to the evolution of polar nano-regions, which is one order of magnitude larger than the previously reported value in KTN crystals. This strengthens the realization of replacing toxic lead-based electrostrictive materials with environmentally friendly KTN materials in real world applications.

In this paper, we report a three orders-of-magnitude increase in the speed of a space-charge-controlled KTN beam deflector achieved by eliminating the electric field-induced phase transition (EFIPT) in a nanodisordered KTN crystal. Previously, to maximize the electro-optic effect, a KTN beam deflector was operated at a temperature slightly above the Curie temperature. The electric field could cause the KTN to undergo a phase transition from the paraelectric phase to the ferroelectric phase at this temperature, which causes the deflector to operate in the linear electro-optic regime. Since the deflection angle of the deflector is proportional to the space charge distribution but not the magnitude of the applied electric field, the scanning speed of the beam deflector is limited by the electron mobility within the KTN crystal. To overcome this speed limitation caused by the EFIPT, we propose to operate the deflector at a temperature above the critical end point. This results in a significant increase in the scanning speed from the microsecond to nanosecond regime, which represents a major technological advance in the field of fast speed beam scanners. This can be highly beneficial for many applications including high-speed imaging, broadband optical communications, and ultrafast laser display and printing.

In this paper, a high-speed non-mechanical two-dimensional KTN beam deflector is reported. The scanning mechanism is based on the combination of space charge controlled beam deflection and temperature gradient enabled beam deflection in a nanodisordered KTN crystal. Both theoretical analyses and experimental investigations are provided, which agree relatively well with each other. This work provides an effective way for realizing multi-dimensional high-speed non-mechanical beam deflection, which can be very useful for a variety of applications, including high-speed 3D laser printing, high resolution high speed scanning imaging, and free space reconfigurable laser communications.

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