Perfect absorption (PA) of incident light is important for both fundamental light-matter interaction studies and practical device applications. PA studies so far have mainly used resonant nanostructures that require delicate structural patterning. Here, we realize tunable and broadband PA in the near-infrared region using relatively simple thin film coatings. We adjust the growth condition of an ITO film and control its epsilon-near-zero (ENZ) wavelength. We show that this results in highly tunable PA in the telecommunication window. Then, using an ITO multilayer of different ENZ wavelengths, we demonstrate broadband PA that covers a wide range of near-infrared wavelengths. The use of ENZ coatings makes PA adjustable during the film growth and does not require any structural patterning afterward. It also facilitates the chip-scale integration of perfect absorbers with other device components. Broadband PA relaxes the single wavelength condition in previous PA studies, and thus it is suitable for many practical device applications, including sensors, photodetectors, and energy harvesting devices.

Nano‐tailoring the shape and dimensions of the parabolic antireflective structure predicted by simulation has been successfully carried out to fabricate monolithic high‐performance antireflection (AR) polymer films. The average total reflectivity from an artificial antireflection film is lowered down to 0.64% at a wavelength range of 400 nm to 800 nm, which appears to be the best antireflection performance ever reported for transparent polymer antireflection films.

A design for omnidirectional high reflectors with quarter-wave dielectric stacks in the optical telecommunication band that uses conventional optical thin-film design theory is described. The omnidirectional bandwidth is derived in units of wavelength and investigated as a function of its high- and low-refractive-index values in the near infrared. The results show that the high refractive index should be larger than 2.26 for an omnidirectional high reflector and that the low refractive index for maximum onmidirectional bandwidth should be approximately 1.5. It is shown that one can design broad-bandwidth omnidirectional high reflectors for S, C, and L bands for optical telecommunication simply by connecting the band edges of omnidirectional high reflectors.

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We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices.