This paper presents a modeling method to demonstrate engagement-level military simulation which includes few combat objects, or entities. To this end, the paper, on the basis of the discrete event system specification (DEVS) formalism, centers on two ideas: (1) a combat entity’s model structure at the composition level; and (2) behavioral delineation of the entity’s elementary component. In detail, we classify the combat entity model into platform and weapon models and create six groups of the model categorized by two dimensions: three activities and two abstractions. And the elementary component in the group interprets an engagement scenario as a flow of executable tasks, which are expressed by DEVS semantics. The stated structures and semantics provide intuitive appeal, reducing the effort required to read and understand the model’s behavior. From the combat experiments, we can gain interesting experimental results regarding engagement situations employing underwater weapons and their tactical operations. Finally, we expect that this work will serve an immediate application suited to various engagement situations.

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Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si (100) substrates at room temperature using a reactive magnetron sputtering system. The effects of Y content on the bonding structure, crystallographic structure, and electrical properties of Y-doped HfO 2 films are investigated. The x-ray photoelectron spectrum (XPS) indicates that the core level peak positions of Hf 4f and O 1s shift toward lower energy due to the structure change after Y doping. The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased. The x-ray diffraction and high resolution transmission electron microscopy (HRTEM) analyses reveal the evolution from monoclinic HfO 2 phase towards stabilized cubic HfO 2 phase and the preferred orientation of ( 111) appears with increasing Y content, while pure HfO 2 shows the monoclinic phase only. The leakage current and permittivity are determined as a function of the Y content. The best combination of low leakage current of 10 −7 A/cm 2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%. A correlation among Y content, phase evolution and electrical properties of Y-doped HfO 2 ultra-thin film is investigated.

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SiOF films deposited by a helicon wave plasma chemical vapor deposition method has been characterized using Fourier transform infrared spectroscopy and ellipsometry. High density plasma of ≳1012 cm−3 can be obtained on a substrate at low pressure (<10 mTorr) with rf power ≳400 W with a helicon plasma source. A gas mixture of SiF4, O2, and Ar was used to deposit SiOF films on 5 in. Si(100) wafers not intentionally heated. Optical emission spectroscopy was used to study the relation between the relative densities of the radicals and the deposition mechanism. It was found that the addition of Ar gas to the SiF4/O2 mixture greatly increased the F concentration in the SiOF film. Discharge conditions such as gas composition, sheath potential, and the relative densities of the radicals affect the properties of the film. The dielectric constant of the SiOF film deposited using the helicon plasma source was 3.1, a value lower than that of the oxide film by other methods.