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High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.

We demonstrate the precise control of the negative-differential transconductance (NDT) effects on a gated p+-i-n+ Si ultra-thin body transistor. The device clearly displays the N-shape transfer characteristic (i.e., NDT effect) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics. The position and the current level of the peak in the NDT region are systematically controllable when modulating the potential profile at the channel-source junction. Namely, the NDT effect can be systematically modulated through modifying the band-to-band tunneling condition by controlling both gate- and drain-bias voltages. In-depth analyses on the transport characteristics and transport mechanisms are discussed.

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