Abstract-This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.Index Terms-Light-emitting diodes (LEDs), GaN, quantum dots (QDs), phosphor.
Abstract-This study demonstrates how the insertion of a thin silicone layer into a dual-layer remote phosphor structure enhances light extraction in white light-emitting diodes (WLEDs). In the experiment, a dual-layer phosphor structure yielded a higher intensity of blue and yellow components than a conventional structure. Moreover, the lumen flux was 5% higher than a conventional remote phosphor package at the same correlated color temperature (CCT). Using a TFCalc32 simulation, the electric field intensity was calculated for different thicknesses of the dual-layer remote phosphor structures, and the enhanced use of blue rays was verified. Additionally, the dual-layer structure reduces chromaticity deviations as the driving current increases.
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