The pre-treatment of substrate surface had been a key part of DLC film preparation to improve mechanical and tribological properties. Ti plasma etching pre-treatment was investigated in this paper as a new effective surface pre-treatment method to substitute transition layer. This pre-treatment used high-energy Ti plasma to impact substrate surface. Ti plasma etched the substrate to a depth of 407 nm and increased the roughness from 1.36 to 40.39 nm. A trace layer of substrate, together with cobalt, oxides, and other impurities, was removed. Ti plasma broke some top WC crystals and combined with the free carbon ions separating from the substrate. A DLC film was deposited on the etched surface. Compared with DLC films deposited on the untreated substrate and Ti transition layer, the DLC film on the Ti plasma etched substrate had best adhesion strength of 34.14 N. The three DLC films had the same sp 3 bonding carbon content, but Ti plasma etching treatment could promote the formation of sp 3 bonds on the interface of substrate and DLC film. This DLC film had low friction coefficient of 0.12 and low wear rate of 5.11 Â 10 À7 mm 3 / mÁN. In summary, Ti plasma etching pre-treatment could significantly improve the adhesion of DLC film and keep its excellent tribological properties.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2025 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.