In this paper, we report the in situ measurement of the temperature stability of narrow-band-pass filters on different types of substrate, for dense wavelength division multiplexing (DWDM) filters in optical-fiber transmission systems. The DWDM filters were designed as all-dielectric Fabry-Perot filters and fabricated by reactive ion-assisted deposition. Ta 2 O 5 and SiO 2 were used as high-and low-refractive-index layers, respectively, for constructing the DWDM filters. The accuracy and stability of the coating process were evaluated for fabricating the DWDM filters for the temperature stability of the center wavelength. The center wavelength shift was determined to be greatly dependent on the coefficient of thermal expansion of the substrate on which the filter is deposited.

The generalised spheroidal wave equations for a hydrogenic system in half space are solved exactly. The eigenvalues of the lowest twenty-two physical states are obtained and presented in tabular form and/or in the form of curves. The results are analysed and also discussed along with the non-crossing rule of von Neumann and Wigner.

The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.