The lower charge mobility of organic semiconductors relative to that of inorganic semiconductors is a thorny problem that still has not been resolved.

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Summary of main observation and conclusion Organic semiconductor materials with low reorganization energy have various applications such as in organic light‐emitting diodes (OLEDs), organic field‐effect transistor (OFETs) and organic solar cells (OSCs). In this work, we have designed a new class of gridspiroarenes (GS‐SFX and GS‐SITF) with #‐shaped structures, which have novel crisscross geometrical structures compared to widely used spirocyclic arenes—SFX and SITF. The structure electronic properties, adiabatic ionization potentials (IPa), adiabatic electron affinities (EAa) and reorganization energies (λ) of GS‐SFX and GS‐SITF have been calculated using density functional theory (DFT) method. The calculated HOMO and LUMO spatial distributions suggest that GS‐SFX and GS‐SITF have better transport properties. The noncovalent interaction analysis shows the weak intramolecular interactions between their arms. The results indicate that the reorganization energies of GS‐SFX and GS‐SITF are significantly reduced compared to the dimer structures—DSFX and DSITF. Furthermore, the GS‐SITF1 which is one of the isomers of GS‐SITF exhibits the lowest values for λ(h) (0.067 eV) and λ(e) (0.153 eV). Therefore, we believe the predicted structure, electronic property, and reorganization energy are good indicator for transport materials. This work has systematically studied the effect of gridization, which provides insights to design organic semiconductor materials with excellent charge transport properties.

High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piezoelectric, pyroelectric, and ferroelectric effects but also photoelectric conversion efficiency in OPVs, carrier mobility in OFETs, and charge density in charge-trapping memories. Herein, we report an ultralong persistence length (lp≈41 nm) effect of spiro-fused organic nanopolymers on dielectric properties, together with excitonic and charge carrier behaviors. The state-of-the-art nanopolymers, namely, nanopolyspirogrids (NPSGs), are synthesized via the simple cross-scale Friedel-Crafts polygridization of A2B2-type nanomonomers. The high dielectric constant (k=8.43) of NPSG is firstly achieved by locking spiro-polygridization effect that results in the enhancement of dipole polarization. When doping into a polystyrene-based dielectric layer, such a high-k feature of NPSG increases the field-effect carrier mobility from 0.20 to 0.90 cm2 V-1 s-1 in pentacene OFET devices. Meanwhile, amorphous NPSG film exhibits an ultralow energy disorder (<50 meV) for an excellent zero-field hole mobility of 3.94×10−3 cm2 V−1 s−1, surpassing most of the amorphous π-conjugated polymers. Organic nanopolymers with high dielectric constants open a new way to break through the bottleneck of efficiency and multifunctionality in the blueprint of the fourth-generation semiconductors.