The radiation damage response of Ti 3 SiC 2 heated from 120°C to 850°C during 700 keV Si + irradiation has been investigated. The samples were analyzed using glancing incidence Xray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiC x . Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a b phase in addition to the normal a phase of Ti 3 SiC 2. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures.