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The application of hollow cathodes to the deposition of thin films from molecular gases is discussed. Precursor gases are decomposed in glow discharges created in the hollow cathode tubes while a laminar viscous gas flow is maintained through the tube towards a substrate. Either the substrate or another structure external to the hollow cathode, such as a coaxial tube, may function as the anode. Deposition rates up to 30 μ/min are observed for a-Si:H. These high-deposition rates are attributed to the high power density in the plasma combined with the efficient transport of the radicals to the substrate. A coaxial hollow cathode arrangement allows the deposition of insulating films by a direct current process. The unusual properties of amorphous silicon and silicon nitride films deposited with these electrode structures are discussed.

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