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International audienceWe report on the design, fabrication and characterization of a 300 GHz Schottky-diode frequency tripler made of two mirror-image integrated circuits that are power-combined in-phase in a single waveguide block using compact Y-junctions at the input and output waveguides. Each chip features six anodes on a 5 μm thick GaAs membrane. The tripler has 5-15% conversion efficiency measured across the 265-330 GHz band when driven with 50-250 mW of input power at room temperature. At 318 GHz it delivers a peak power of 26 mW with 11% conversion efficiency. The power-combined frequency multiplier is compared with a single-chip tripler designed for the same band using the same integrated circuit

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We report on the design and performance of a fix-tuned 2 3 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 W across the band with a peak power of 100 W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.Index Terms-Frequency multiplier, frequency tripler, local oscillator (LO), Schottky diode, submillimeter wavelength, THz technology, varactor.

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