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Organic field-effect transistors (OFET) based on octamethylenetetrathiafulvalene (OMTTF) and the t-butyl derivative are investigated. The parent OMTTF shows poor transistor performance owing to the flat molecular arrangement, but the t-butyl substitution realizes standing molecular arrangement and high OFET performance. The tetracyanoquinodimethane (TCNQ) complex of OMTTF exhibits n-channel properties despite the strong donor ability of OMTTF.

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The COT (Color Filter on TFT Array) Structure without the use of organic insulator in TFT substrate and photolithography process in upper substrate was developed. Cost reduction and enhancement of light efficiency could be achieved by adopting inorganic insulator, SiNx, instead of thick organic layer. Through photolithography-free structure in upper substrate where bare glass is used as upper unit in cell process, we could simplify manufacturing steps and realize margin free COT in cell assembly. To embody this COT configuration, firstly the outer region of display area was re-designed to prevent light leakage that occurs in the borderline between panel and mechanical parts. Secondly, low temperature CVD (Chemical Vapor Deposition) process that can guarantee adhesion stability between SiNx and CF (Color Filter) layer was also developed. And finally, novel cell assembly method for using bare glass as the upper substrate was adopted.

Organic Transistors Based on Octamethylenetetrathiafulvalenes. -The tert.-butyl substitution in title compound (Ib) realizes standing arrangement of the molecules and consequently good OFET (organic field-effect transistor) performance. OFETs have attracted considerable attention for electronic applications, e.g. flexible displays. -(INOUE, J.-I.; KANNO, M.; ASHIZAWA, M.; SEO, C.; TANIOKA, A.; MORI*, T.; Chem. Lett. 39 (2010) 6, 538-540, DOI:10.1246/cl.2010.538 ; Dep. Org. Polym. Mater., Tokyo Inst. Technol., Meguro, Tokyo 152, Japan; Eng.) -M. Paetzel 46-210