Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz1/2at 100 hertz.

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is found to be dominating above 108 Hz. This frequency dependence of dielectric behavior is explained by the damped harmonic oscillator model with temperature dependent coefficients. The imaginary part of impedance (Z″) and modulus (M″) spectra show that there is a distribution of relaxation times. The scaling behaviors of Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent at low frequencies. The dielectric loss spectra at different temperatures have not shown a scaling behavior above 108 Hz. A comparison between the Z″ and the M″ spectra indicates that the short-range charges motion dominates at low temperatures and the long-range charges motion dominates at high temperatures. The above results indicate that the dielectric dispersion mechanism in SCFO is temperature independent at low frequencies and temperature dependent at high frequencies due to the domination of resonance behavior.

In this work, all ink-jet printed (IJP) low-voltage organic field-effect transistors (OFETs) on flexible substrate are reported. The OFETs use IJP silver (Ag) for source/drain/gate electrodes, poly(4-vinylphenol) (PVP) for gate dielectric, 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) blended with polystyrene (PS) as the semiconducting layer and CYTOP for encapsulation layer. All the printing processes were carried out in ambient air environment using a single laboratory ink-jet printer Dimatix DMP-2831. The all IJP device presents state-of-the-art performance with low operation voltage down to 3 V, small subthreshold swing (SS) of 0.155 V/decade, mobility of 0.26 cm 2 V-1 s-1 , threshold voltage (V th) of-0.17 V and on/off ratio of 3.1×10 5 , along with a yield of 62.5%. Through interface engineering and proper process optimization, this work demonstrates a promising low-voltage all IJP device platform for low-cost flexible printed electronics. Keywords Organic field effect transistors (OFETs); all ink-jet printed TFTs; low-voltage operation §: Linrun Feng and Chen Jiang contributed equally to this work.

Recently, investigation on two-dimensional (2D) organic polymers has made great progress, and conjugated 2D polymers already play a dynamic role in both academic and practical applications. However, a convenient, noninterfacial approach to obtain single-layer 2D polymers in solution, especially in aqueous media, remains challenging. Herein, we present a facile, highly efficient, and versatile "1D to 2D" strategy for preparation of free-standing single-monomer-thick conjugated 2D polymers in water without any aid. The 2D structure was achieved by taking advantage of the side-by-side self-assembly of a rigid amphiphilic 1D polymer and following topochemical photopolymerization in water. The spontaneous formation of single-layer polymer sheets was driven by synergetic association of the hydrophobic interactions, π-π stacking interactions, and electrostatic repulsion. Both the supramolecular sheets and the covalent sheets were confirmed by spectroscopic analyses and electron microscope techniques. Moreover, in comparison of the supramolecular 2D polymer, the covalent 2D polymer sheets exhibited not only higher mechanical strength but also higher conductivity, which can be ascribed to the conjugated network within the covalent 2D polymer sheets.