No abstract

Organic−inorganic hybrid halide perovskites (OHHPs) offer excellent resistive switching (RS) properties, making them candidates for applications involving low-cost, flexible memories. However, compared with the operational stability of traditional oxide-based RS materials, the operational stability (in terms of endurance and retention) of OHHPs remains an obstacle to their use in RS memories. This paper reports an RS memory with reliable nonvolatile bipolar RS characteristics; the resistive layer is fabricated using a triple-cation perovskite owing to its structural stability and low sensitivity to the atmosphere. These devices offer operational stability over 10 3 endurance cycles and a retention time of up to 10 5 s through an adjustable forming process, which exceeds that of the most previous reports for OHHP-based RS memories with electrodes of Au, graphene, and Al. To better understand the RS mechanism, we simulated the evolution of iodine vacancies using a kinetic Monte Carlo model to elucidate the dynamics of conductive filaments and the device-failure mechanism. The results of this study should improve the stability and increase the understanding of the RS mechanism of OHHP-based memories.

pulse. It is still lack of studies to characterize the real pulse applied on the device since ultrafast pulse signal could be distorted by the parasitic effect of the cable and device. The common solution is to ignore this factor or simply slow down the measurements. [4][5][6][7][8][9][10] Given this, quantitative analysis of the RESET process in sub-nanosecond has not been studied in depth. [12] In this study, a high-speed measurement setup was carefully designed for general cross-bar RRAM devices. The waveform shown on the oscilloscope was synchronized with the pulse applied on device. A 50 Ω terminated probe was customized to match impedance and the return path was carefully controlled. The RESET resistance was recorded in corresponding to each ultrafast pulse. Experimental data prove that stable resistive switching can be realized by sub-nanosecond pulse on HfO x -based RRAM. It is shown that HfO x -based RRAM has great potential on high-speed memory applications.We also quantitatively analyzed the RESET process with sub-nanosecond pulse and studied the relationship between the resistance and pulse conditions. A compact model was constructed based on the insight of RESET behavior simulation. Oxygen ions migration driven by thermal effect and electric field were discussed in detail during the RESET process of HfO x -based RRAM. The physical phenomena of RESET process were clarified through this ultrafast RESET measurement, which shows more physics detail during the RESET operations.