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Photocatalytic CO2 conversion to fuels is a promising strategy for achieving global carbon neutrality. However, infrared light, which accounts for ∼50% of the full sunlight spectrum, has not yet been effectively utilized via photocatalysis. Here, we present an approach to directly power photocatalytic CO2 reduction using near-infrared light. This near-infrared light-responsive process occurs on an in situ generated Co3O4/Cu2O photocatalyst with a nanobranch structure. Photoassisted Kelvin probe force microscopy and relative photocatalytic measurements demonstrate the increase of surface photovoltage after illumination by near-infrared light. We also find that Cu(I) on this in situ generated Co3O4/Cu2O could facilitate the formation of a *CHO intermediate, thus enabling a high-performance CH4 production with a yield of 6.5 μmol/h and a selectivity of 99%. Moreover, we perform a practically oriented direct solar-driven photocatalytic CO2 reduction under concentrated sunlight and achieve a fuel yield of 12.5 μmol/h.

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This paper reports a selective growth method for growing crack-free semi-polar (1-101) GaN on V-grooved 7°-off (001) Si substrates by using a reticular SiO2 mask. This method effectively reduces the effect of thermal stress on GaN so that crack-free (1-101) GaN films as thick as 1 μm are obtained after coalescence of the selectively grown hexagonal pyramids. Transmission electron microscopy investigations clearly show the presence of low dislocation density regions, which result from the bending of dislocations toward the {1-100} directions during the facet growth stage. The stress and corresponding localized surface defects in GaN grown on the patterned Si substrates are depicted by cathodoluminescence spectroscopy.