This paper proposed an ultra-low-power successive approximation register analog to digital converter (ADC) for medical implant devices. To reduce power consumption, the novel techniques presented in this paper are a tri-state capacitor unit, a novel switch scheme, and a new low static power comparator. Tri-state capacitor unit reduces down power without the use of middle voltage reference. The proposed switch scheme can complete the most-significant bit 3-bit conversion without any power consumption. The offset of the low static power comparator is only optimized by physical design. This ADC is fabricated in a 110 nm 1P5M CMOS process. The reference voltage of DAC is 1 V, and the supply voltage of comparator and digital logic is 1 .5 V. At 10 kS/s sampling rate, the signal to noise and distortion ratio (SNDR) is 57 .57 dB and power consumption is 24 nW.

In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.