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Medium‐temperature molten Dy3+‐doped silicate (LNKBAS) glass phosphors can be excited efficiently in the low‐energy ultraviolet region (UVA). To this end, the addition of sensitizers Sb3+ and Ce3+ expands the validly excitable wavelength of Dy3+ from 348 to 248 nm. Fluorescence spectra demonstrate the superposition effect of the sensitization in the high‐energy ultraviolet region (UVC), and the multiplicative effect of sensitization in the UVA and medium‐energy ultraviolet region (UVB) for Sb3+–Ce3+–Dy3+ tri‐doped LNKBAS glass phosphors. The chromaticity coordinate of LNKBASCe0.04Sb0.1Dy1.0 is (0.2725, 0.3031) at 248 nm excitation, and the sensitization coefficient of LNKBASCe0.04Sb0.2Dy1.0 reaches at 19.85 under 309 nm excitation. Static fluorescence photographs and dynamic fluorescence video reveal the excitation expansion and the multiplicative effect of sensitization to Dy3+ by adding sensitizers at a macroscopic level. In general, the ideal rare‐earth energy conversion in medium‐temperature molten silicate glass phosphors offers promising prospects for saving energy and manufacturing high‐quality optoelectronic devices.

We have theoretically studied fundamental shot noise properties in single- and dual-gated silicene nanostructures. It is demonstrated here that due to the intrinsic spin–orbit gap, the Fano factor (F) in the biased structures does not coincide with the characteristic value F = 1/3, a value frequently reported for a graphene system. Under gate-field modulations, the F in the gated structure can be efficiently engineered and the specific evolution of the F versus the field strength is symmetric with the center of spectra oppositely shifting away from the zero field condition for the valley or spin-coupled spinor states. This field-dependent hysteretic loop thus offers some flexible methods to distinguish one spinor state from its valley or spin-coupled state via their numerical difference in the F once the incident beam is spin or valley-polarized.