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Mask three-dimensional (M3D) effects are non-negligible for imaging simulation of EUV lithography systems. Especially, the curvilinear mask obtained by inverse lithography technique (ILT) increases the difficulty to calculate the diffraction spectrum of the thick masks. In this paper, a fast thick-mask model based on multi-channel U-Net (MCU-Net) is proposed to solve this problem. The diffraction near-field (DNF) of thick mask in EUV lithography is characterized by four complex-valued diffraction matrices, the real parts and imagery parts of which can be represented by eight realvalued diffraction matrices in total. Then, all of the eight real-valued diffraction matrices can be synthesized together using the proposed MCU-Net model. The parameters of MCU-Net are trained in a supervised manner based on a precalculated DNF dataset of curvilinear thick masks. The comparison of the proposed method with some other learningbased thick-mask models is provided and discussed. It shows that the MCU-Net is efficient and accurate to simulation the M3D effect in EUV lithography.

Major commemorative activities can carry and transmit the content of ideological and political education, with distinct political nature, extensive participation and strong characteristics of the times. Therefore, major commemorative activities have the function of ideological and political education. The ideological and political education function of major commemorative activities is mainly manifested in strengthening political identity, condensing value consensus and enhancing mission responsibility. By enriching the forms of practical activities, widely using new media and realizing the organic unity of family, school and society, we will give full play to the ideological and political education function of major commemorative activities, so as to cultivate qualified builders and reliable successors for the cause of socialism with Chinese characteristics.