Inductively coupled plasmas (ICPs) are extensively used for materials processing and microelectronics fabrication. However, their electromagnetic properties have not been fully characterized. In this regard, we have performed fully three dimensional (3D), time dependent measurements of the magnetic field, electron density, and electron temperature for an ICP sustained in argon in an industrial reactor designed for plasma etching in microelectronics fabrication. These measurements were compared to modeling results. The plasma was generated using pulsed power delivered at 2 MHz by a planar coil. The magnetic field was measured using a three axis magnetic probe at 15 366 locations throughout the plasma volume during the H-mode portion of the pulse at temporal intervals of 2 ns. A swept Langmuir probe was used to measure plasma parameters at the same locations. The plasma density measurement was calibrated with line-integrated densities obtained using a 96 GHz interferometer. During a single radio frequency (RF) cycle, the 3D current density [derived from B(r→,t)]is initially maximum just below the coil and moves downward toward the center of the chamber. Isosurfaces of current are nearly symmetric toroids. The total electric field, space charge field, and inductive electric field were derived and used to calculate the dissipated power, plasma current, and Poynting flux. Computer modeling of the experiment reproduces the phase dependent behavior. Animations showing the time dependent 3D measurements are presented in the supplementary material.

The English proficiency of Chinese college students is mainly constrained by their low interest in English learning. The English educators in Chinese colleges must improve the initiative of their students to learn English. This paper attempts to create a college English teaching platform based on computer networking technology. Taking flipped classroom as the theoretical basis of college English education, the author introduced the concept and development of flipped classroom, and verified the feasibility of applying the theory in English teaching. To provide the media for flipped classroom, a college English teaching platform was built on the browser/server (B/S) structure, and used to promote the information-based English teaching in colleges. The functional modules and main interfaces of the platform were illustrated one by one. The flipped classroom-based B/S teaching platform was adopted for one semester by a college in Hunan Province. The class using this platform was taken as the test group, and another class without using the platform as the control group. The English scores of the two groups were compared, confirming the effectiveness of the proposed platform. Our research demonstrates the value of flipped classroom, and the proposed teaching platform helps improve the efficiency of college English teaching.

Matching of power delivery to nonlinear loads in plasma processing is a continuing challenge. Plasma reactors used in microelectronics fabrication are increasingly multi-frequency and/or pulsed, producing a non-linear and, in many cases, non-steady state electrical termination that can complicate efficient power coupling to the plasma. This is particularly the case for pulsed inductively coupled plasmas where the impedance of the plasma can significantly change during the start-up-transient and undergo an E–H (capacitive-to-inductive) transition. In this paper, we discuss the results from a computational investigation of the dynamics of power matching to pulsed inductively coupled plasmas (Ar/Cl2 mixtures of tens of mTorr pressure) using fixed component impedance matching networks and their consequences on plasma properties. In this investigation, we used set-point matching where the components of the matching network provide a best-case impedance match (relative to the characteristic impedance of the power supply) at a chosen time during the pulsed cycle. Matching impedance early during the pulse enables power to feed the E-mode, thereby emphasizing capacitive coupling and large excursions in the plasma potential. This early power coupling enables a more rapid ramp-up in plasma density while being mismatched during the H-mode later in the pulse. The early match also produces more energetic ion bombardment of surfaces. Matching late in the pulse diminishes power dissipated in the E-mode at the cost of also reducing the rate of increase in plasma density.

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used during plasma etching for the high power densities they generate during the pulse-on period, and for their unique chemistries during the pulse-off period. The use of highly attaching halogen gases produces low electron densities during the pulse-off period, and these low densities can result in instabilities, E-H transitions and ignition delays when applying power on the next pulse. To mitigate these possibilities, a low-level power environment could be maintained during 'pulse-off' to moderate the minimum plasma density, therefore reducing ignition delays and enhancing plasma stability. In this work, ICPs sustained by 5 kHz pulsed power using Ar/Cl 2 mixtures at 20 mTorr were computationally investigated using a high-power, low-power format. For these conditions, the computed electron temperature (T e ) reaches a quasi-steady state during both the high-and low-power excitation. The model predicts that within the electromagnetic skin-depth, T e spikes to a high value during a low-to-high power transition, and to a low value during a high-to-low power transition. At the same time, a few cm above the substrate, there is little modulation in T e , as electron power convected from the skin depth disperses in traversing the reactor. The positive and negative spikes, and convection of transients across the reactors, are functions of power ramping time and gas mixtures.

Plasma-enhanced atomic layer deposition (PE-ALD) is widely used for dielectric deposition in semiconductor fabrication due to its ability to operate at low temperatures while having high precision control. The PE-ALD process consists of two subcycles: precursor dosing and plasma exposure with gas purging and filling in between. In the PE-ALD of SiO2, a Si-containing precursor is first deposited on the surface, usually in a plasma-free environment. The surface is then exposed to an oxygen-containing plasma during which the residual components of the precursor are removed and the Si oxidized. Various factors affect the outcome of SiO2 PE-ALD, such as exposure times during each step, steric hindrance of the Si precursor, and plasma properties, such as the energy of ions incident onto the film. The results from computational investigations of the first layers of SiO2 PE-ALD at both reactor (cm) and feature (nm) scales are discussed in this paper. The example system uses bis(tertiary-butylamino)silane, SiH2[NH(C4H9)]2 as the silicon precursor during dosing and plasmas operating in Ar/O2 gas mixtures during the oxidation step. Parametric studies were performed for blanket deposition, as well as deposition in trenches and vias while varying power, pressure, plasma exposure time, aspect ratio, and ligand retention in the film. The general trends show that conditions that reduce the fluence of reactive oxygen species typically decrease the O/Si ratio, increase the vacancies in the films, and decrease the order of the film. Conditions that result in higher ion fluxes having higher energies produce the same result due to sputtering. The retention of ligand groups from the precursor significantly decreased growth rates while increasing vacancies and reducing the O/Si ratio.