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ArF excimer laser(, =193nm) lithography is emerging following KrF DUV lithography(, = 248nm). 193nm lithography has proven its potential for feature sizes down to 0.15µm lines/spaces patterns using high NA(O.b) because of resolution improvement. However, in practical use of ArF technology, there are problems involved in the properties of photoresist. To solve these problems, we synthesized ArF polymer resin, poly(2-(2hydroxyethyl) carboxylate-5-norbornene / 2-t-butylcarboxylate-5-norbornene 12-carboxylic acid-5-norbomene/ Maleic anhydride), all of the main chains are composed of alicyclic unit. 2-(2-Hydroxyethyl) carboxylate-5-norbornene was found as a very suitable adhesion promoter. Using this resist, 0.15 p m L/S pattern was obtained at 14mJlcm2 doses, using an ArF stepper on the developer, 2.38wt% tetramethyl ammonium hydroxide aqueous solution.