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The insulated-gate bipolar transistor (IGBT) is one of the most promising power switching devices. The purpose of this study is to develop a response surface method (RSM) model to design an optimum IGBT device. This RSM model is developed based upon the fabrication simulator, SSUPREM IV, and the device simulator, ATLAS II, which simulate the device characteristics. With the aid of design of experiment (DOE), RSM is used to optimize the on-resistance and breakdown voltage performance of IGBT and to investigate the relationships of the optimized design with various device parameters. This study is useful in the design of optimum IGBT devices.

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