A novel process to develop field emitter arrays (FEAs) with sub-micron gate holes for highfrequency (GHz) operation of FEA-based microtriode amplifiers is proposed. The formation of amorphous silicon(a-Si) sidewall may be the key technology used to obtain the emitter structure. Scanning electron microscope (SEM) images, field-emission properties, transconductances, and capacitances of the emitters fabricated are presented. Theoretical considerations on the proposed structure are also discussed.

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