The Conducting of polymers belongs to the class of polymers exhibiting excellence in electrical performances because of their intrinsic delocalized π- electrons and their tunability ranges from semi-conductive to metallic conductive regime. Conducting polymers and their composites serve greater functionality in the application of strain and pressure sensors, especially in yielding a better figure of merits, such as improved sensitivity, sensing range, durability, and mechanical robustness. The electrospinning process allows the formation of micro to nano-dimensional fibers with solution-processing attributes and offers an exciting aspect ratio by forming ultra-long fibrous structures. This review comprehensively covers the fundamentals of conducting polymers, sensor fabrication, working modes, and recent trends in achieving the sensitivity, wide-sensing range, reduced hysteresis, and durability of thin film, porous, and nanofibrous sensors. Furthermore, nanofiber and textile-based sensory device importance and its growth towards futuristic wearable electronics in a technological era was systematically reviewed to overcome the existing challenges.

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This study investigates a device's ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf₁₋ₓZrₓO₂ (HZO). A conventional field-effect transistor (FET) with pure hafnium (HfO2) is used as a control measure and the impact of an internal metal gate (IMG) is also discussed. The study was conducted by using a sub-5-nm HZO and seed layer to fabricate a gate-all-around (GAA) nanowire (NW); a FeFET with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure; and a double layer (DL) of the channel. The channel size used in the experiment was approximately 9.6 × 16 nm² and the total thickness of the gate stack was 9.2 nm. This thickness is 50.5% less than our previous experiment. The FeFET exhibits a considerably high Ion-Ioff ratio exceeding 10⁷. The IMG serves as a potential equalizer and the ferroelectric material is arranged in a more symmetrical electric field. This results in a lower subthreshold (sub-VTH) swing (S.S.min = 49.3mV/decade) with a wide range (10³ ) of drain current compared to that without an IMG. The findings indicate that a high-performance GAA FET can be achieved by combining a DL channel, GAA NW, ferroelectric material, and an IMG.

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