No abstract

We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. The Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of-the-plane electric field, providing controllable gating of edge state important for device applications.

Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remain challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNSs) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin–orbit coupling may result in spin-polarized conduction along certain edge orientations. This quantification of the electronic structure of edge states in SiNS 2DEGs will address ongoing efforts to engineer quantum effects in silicon-based nanostructures.