No abstract

Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag(+)-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag(+) and NO3(-) ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.

Highly conductive and stable PEDOT:PSS films prepared by ethylene-glycol addition and heated-stir treatment offer improved photovoltaic performances.

Recently, silicon (Si) nanowires have been intensively applied for a wide range of optoelectronic applications. Nevertheless, rare explorations considering the photodegradation of organic pollutants based on Si nanowires were performed, and they still require vast improvement, in particular for their degradation efficiency. In this study, broad-band and high efficiency photocatalytic systems were demonstrated through the good incorporation of Si nanowires with highly fluorescent carbon nanodots. The photodegradation rate of these intriguing heterostructure arrays under a 580 nm light illumination is approximately 6 times higher than that of sole Si nanowires, and more than 3.6 and 4.5 times higher than that of Si nanowire incorporated with silver and gold nanoparticles, respectively. Optimizing the luminescent behaviors of carbon nanodots leads to the involvement of multiple light sources that activate the photoexcitation of carriers within the Si nanowires. This feature was further elucidated by examining the corresponding photocurrents under light illumination, which presents currents 1.9 times higher than those with the sole Si nanowires. In combination with excellent wettability with dye solutions, the present heterostructured nanowire arrays have promised the robust photocatalytic capability with retained efficiency after cycling uses, which may open up unique opportunities for future pollutant detoxification and wastewater treatment.