The fabrication of a monolithic indium -antimonide 32 x 32 CID array applicable for staring infrared imaging sensors is presented with preliminary characterization results. The basic MIS technology utilizes lowtemperature CVD to deposit insulating layers of nitrogen -doped Si0 on bulk indium -antimonide substrates.A two -level insulator /two -level metal structure results in a simple your -mask process flow for the CID array. Completed arrays demonstrate acceptable dark currents that result in 20 ms storage times at 77K and are completely photocurrent dominated for typical tactical background photon flux densities in the 1015 to 1016 photons /cm2s range.Charge transfer experiments indicate acceptable transfer efficiencies for CID operation. Plans to demonstrate thermal imagery are presented.

The development of InSb staring image sensors is reviewed. Some necessary conditions to achieve the first imaging demonstration are described from semiconductor material, oxide insulator, device structure and device operation aspects. The readout operation design by utilizing the InSb material properties is revealed. The progress since then is briefly presented. The future competitions and development directions are discussed.