Inkjet printing of inorganic materials for the formation of active devices is relatively rare compared to the research done with respect to organic materials. To date, only a handful of inorganic materials have been ink-jet printed, primarily because of the difficulty in preparing ink-jet-printable precursors. We have developed a general and low-cost route to the ink-jet printing of transparent amorphous oxide semiconductors. Our process uses metal halide precursors dissolved in acetonitrile, an organic solvent. This precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink-jet printing and blanket-coating techniques. The printed metal halide thin films are converted to semiconducting metal oxides by thermally annealing the metal halides in the air. In this paper, we report thin-film transistors (TFTs) that were fabricated using this technique with field-effect mobilities as high as 7.4 cm 2 V -1 s -1 and 16.1 cm 2 V -1 s -1

Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature.

Diatoms are single‐celled algae that make microscale silica shells called “frustules”, which possess intricate nanoscale features imbedded within periodic two‐dimensional pore arrays. In this study, antibody‐functionalized diatom biosilica frustules serve as a microscale biosensor platform for selective and label‐free photoluminescence (PL)‐based detection of immunocomplex formation. The model antibody rabbit immunoglobulin G (IgG) is covalently attached to the frustule biosilica of the disk‐shaped, 10‐µm diatom Cyclotella sp. by silanol amination and crosslinking steps to a surface site density of 3948 ± 499 IgG molecules µm−2. Functionalization of the diatom biosilica with the nucleophilic IgG antibody amplifies the intrinsic blue PL of diatom biosilica by a factor of six. Furthermore, immunocomplex formation with the complimentary antigen anti‐rabbit IgG further increases the peak PL intensity by at least a factor of three, whereas a non‐complimentary antigen (goat anti‐human IgG) does not. The nucleophilic immunocomplex increases the PL intensity by donating electrons to non‐radiative defect sites on the photoluminescent diatom biosilica, thereby decreasing non‐radiative electron decay and increasing radiative emission. This unique enhancement in PL emission is correlated to the antigen (goat anti‐rabbit IgG) concentration, where immunocomplex binding follows a Langmuir isotherm with binding constant of 2.8 ± 0.7 × 10−7 M.

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Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.