In this paper, the stacked HfO2/SiO2 metal-oxide-semiconductor (MOS) tunneling temperature sensors prepared by a process below 380°C are investigated. The temperature responses of the stacked HfO2/SiO2 MOS tunneling temperature sensors at high and low temperature regions are not of the same trend. At high temperature, the saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor may be affected by the Frenkel–Poole (F-P) effect. It was also observed that the thicker the stacked HfO2 layer in the HfO2/SiO2 MOS structure, the higher the effect of the F-P mechanism in the device’s temperature response. The stacked HfO2/SiO2 MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with pure SiO2 MOS tunneling temperature sensors.

In this work, simple and low-cost metal–oxide–semiconductor (MOS) structure solar cells with silicon dioxide prepared by anodization technique in deionized water at room temperature are proposed. The characteristics of MOS structure solar cells are dependent on anodization time. It was observed that the efficiency and the leakage current density of MOS structure solar cells increase when the anodization time decreases. Oxide thickness is critical for the MOS structure solar cell and it can be controlled by anodization techniques. For a cell exposed under 1000W∕normalm2 , efficiency up to 9.7% was demonstrated in this work.

In this paper, the stacked HfO2/SiO2 MOS tunneling temperature sensors prepared by low temperature processing are investigated. The temperature responses of the stacked HfO2/SiO2 MOS tunneling temperature sensors at high and low temperature regions are not the same. The saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor may affected by Frenkel-Poole effect at high temperature. It was also observed that the thicker stacked HfO2/SiO2 MOS tunneling temperature sensors are easier to be affected by Frenkel-Poole effect at high temperature. The stacked HfO2/SiO2 MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with the pure SiO2 tunneling temperature sensors.

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