A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.

Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C 3 N 4 ) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e 11 piezoelectric coefficient of 0.758 C m À 2 is predicted for C 3 N 4 superlattice, significantly larger than that of the commonly compared a-quartz.

Robust and reversible polar topological center domains were found in BiFeO3 nanodots, which are individually controllable.

Ferroelectric flux-closures are very promising in high-density storage and other nanoscale electronic devices. To make the data bits addressable, the nanoscale flux-closures are required to be periodic via a controlled growth. Although flux-closure quadrant arrays with 180° domain walls perpendicular to the interfaces (V-closure) have been observed in strained ferroelectric PbTiO films, the flux-closure quadrants therein are rather asymmetric. In this work, we report not only a periodic array of the symmetric flux-closure quadrants with 180° domain walls parallel to the interfaces (H-closure) but also a large scale alternative stacking of the V- and H-closure arrays in PbTiO/SrTiO multilayers. On the basis of a combination of aberration-corrected scanning transmission electron microscopic imaging and phase field modeling, we establish the phase diagram in the layer-by-layer two-dimensional arrays versus the thickness ratio of adjacent PbTiO films, in which energy competitions play dominant roles. The manipulation of these flux-closures may stimulate the design and development of novel nanoscale ferroelectric devices with exotic properties.

A two-scale phase field simulation is developed for austenite–martensite interface to understand the effects of crystalline symmetry and geometric compatibilities on the reversibility of structural phase transformations in shape memory alloys. It is observed that when the middle eigenvalue of martensite transformation strain is equal to zero, an exact austenite–martensite interface is formed with negligible elastic energy. On the other hand, when the middle eigenvalue is different from 0, an inexact interface between austenite and martensitic twin is formed, and the corresponding elastic energy increases with the increased magnitude of the middle eigenvalue, resulting in substantially higher energy barrier for austenite–martensite transformation, and thus higher thermal hysteresis in shape memory alloys.