The defect-related photoluminescence (PL) levels of CuInS 2 thin films prepared by sulfurization using ditertiarybutylsulfide [(t-C 4 H 9 ) 2 S: DTBS] have been investigated. The PL spectra exhibit three low-energy peaks at 1.37, 1.34, and 1.24 eV. On the basis of these PL spectra observed at different excitation intensities, the emissions are attributed to donor-acceptor pair transitions. The ionization energies of donors in CuInS 2 thin films are determined to be 125, 150, and 280 meV, which are, respectively, due to indium atom-occupied copper vacancies (In Cu ), sulfur vacancies (V S ), and sulfur atom-occupied copper vacancies (S Cu ); whereas that of the acceptor is determined to be 100 meV and has been reported to the copper vacancy (V Cu ). Using these data, a band diagram for the defect levels of CuInS 2 thin films prepared by sulfurization is proposed.

The gamma-ray blazar 1611+343 was observed with polarization VLBI mode at 5 GHz in February 1999. The total intensity (I) VLBI image of the source shows a core-jet structure. The jet bends eastward at ∼ 3 mas south of the core. Four components have been detected from results of fitting, with apparent speeds estimated at 6.7 ± 0.7, 2.5 ± 0.3, 4.5 ± 0.5 h −1 c for three jet components (taking H 0 = 100 h km s −1 Mpc −1 , q 0 = 0.5). The polarization (P ) VLBI image of 1611+343 displays the polarized configuration in the jet. The mechanism of the curved jet is discussed.

A new type microwave dummy-load using Silicon Carbide (SiC) ceramic, which has an indirect water cooling structure, was successfully operated with up to 50-MW of rf power at a 1-µs pulse width and 50-pps repetition rate in the S-band frequency. The input VSWR obtained was less than 1:1

The sequentially chalcogenization growth of Cu(In1-x Al x )(S y Se1-y )2 (CIASSe) films while controlling the S/(S+Se) ratio was demonstrated using Cu–In–Al precursor [Al/(Al+In)≤0.05]. These processes of sulfurization following selenization and selenization following sulfurization might be diffusion- and reaction-limited, respectively. Therefore, selenization following the sulfurization of Cu(In,Al)S2 may be suitable for controlling the S/(S+Se) ratio by process temperature and time. These results represent the first step toward realizing a solar cell using a CIASSe film grown by sulfurization and selenization using conventional and large-scale equipment.

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