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The impact of atomic layer bombardment (ALB) on the aluminum nitride (AlN) passivation layer between the HfO 2 gate dielectric and the n-type epitaxial germanium (Ge) was investigated. The ALB technique was performed with the layer-by-layer, in situ helium/argon plasma bombardment in each cycle of atomic layer deposition (ALD) of AlN. An increase in the film density and a decrease in nitrogen vacancies, as manifested by the X-ray reflection and X-ray spectroscopy, were observed in the AlN layer treated by the ALB process. The improvements in the AlN quality contribute to a reduction of the equivalent oxide thickness from 1.36 to 1.19 nm of the AlN/HfO 2 gate stack, together with the suppression of the gate leakage current, the interfacial state density, and the slow trap density. The reliability tests reveal promising reliability of the AlN/HfO 2 gate stack with a small flat-band voltage shift under the constant voltage stress and a high operation voltage of ∼2.4 V projected for a 10 years time-dependent-dielectricbreakdown lifetime. All of the results point that the ALB technique can effectively enhance the material/interface properties, electrical characteristics, and reliability of nanoscale devices, which is critical and beneficial to the next-generation high-speed and low-power nanoelectronics.

Looks at television that cross content boundaries (both between and within programming) provide an opportunity to examine the causes of attentional inertia—that looks at television become very much more stable after the first few seconds. Previous research left unresolved whether this inertia is due to expectations or biologic processes (strategic vs. nonstrategic processes), and this study allows direct comparisons. The strength of the inertial relationship varied considerably for different kinds of program boundaries, and also for within-program boundaries, with the latter varying as well by the genre in which they were contained. Taken together, the results provided no evidence for nonstrategic, biological processes causing attentional inertia. Instead, several genre-specific explanations based on expectations and cognitive demands are proposed.