The sidegating effect in a GaAs metal–semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

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A cascaded two-stage Mach-Zehnder modulator is used to suppress the harmonic and intermodulation distortions simultaneously. The modulation electric fields are applied on the first and second stages in the y and z directions of z-cut lithium niobate crystal, respectively. Because of the inherent versatility of the adjustable modulation parameters, superior linear modulation response can be achieved. When -50 dB nonlinear suppression is required, the modulation depth of 7.50/0 can be obtained.

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