This paper presents the dry etching performance and expectation of highly conductive thin metal films that are hardly etched at low temperature with conventional plasma dry etching equipment. Dry etching is performed using a combination of H2 and HCl gases in a reactive ion etching system with low temperature susceptor and electron cyclotron resonance (ECR) plasma source. We could achieve high electron temperature enough to dissociate and ionize H and Cl radicals from H2 and HCl molecules.