Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

Atomically thin two-dimensional semiconductors such as MoS 2 hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena. However, the electron mobility of mono-and few-layer MoS 2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS 2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering, here we developed a van der Waals heterostructure device platform where MoS 2 layers are fully encapsulated within hexagonal boron nitride, and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm 2 /Vs for 6-layer MoS 2 at low temperature, confirming that low-temperature performance in previous studies was limited by extrinsic interfacial impurities rather than bulk defects in the MoS 2 . We also observed Shubnikov-de Haas oscillations for the first time in high-mobility monolayer and few-layer MoS 2 . Modeling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-ranged and long-ranged interfacial scattering limits low-temperature mobility of MoS 2 . 3Following the many advances in basic science and applications of graphene, other twodimensional (2D) materials, especially transition metal dichalcogenides (TMDCs), have attracted significant interest for their fascinating electrical, optical, and mechanical properties [1][2][3][4][5][6][7][8] . Among the TMDCs, semiconducting MoS 2 has been the mostly widely studied: it shows a thicknessdependent electronic band structure 3,5 , reasonably high carrier mobility 1,2,6-9 , and novel phenomena such as coupled spin-valley physics and the valley Hall effect 10-14 , leading to various applications, such as transistors 1,7,15 , memories 16 , logic circuits 17,18 , light-emitters 19 , and photo-detectors 20 with flexibility and transparency 2,21 . However, as for any 2D material, the electrical and optical properties of MoS 2 are strongly affected by impurities and its dielectric environment 1,2,9,22 , hindering the study of intrinsic physics and limiting the design of 2D-material-based devices. In particular, the theoretical upper bound of the electron mobility of monolayer (1L) MoS 2 is predicted to be from several tens to a few thousands at room temperature (T) and exceed 10 5 cm 2 /Vs at low T depending on the dielectric environment, impurity density and charge carrier density [23][24][25] . In contrast, experimentally measured 1L MoS 2 devices on SiO 2 substrates have exhibited room-T two-terminal field-effect mobility that ranges from 0.1 -55 cm 2 /Vs 1,26,27 . This value increases to 15 -60 cm 2 /Vs with encapsulation by highdielectric materials 1...

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm(2)/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique 39,40 to measure the thermal transport properties of two TMDC materials, MoS 2 and MoSe 2 , in single-layer (1L) and bi-layer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ~40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illuminated in different radial positions. For 1L MoS 2 and MoSe 2 , the roomtemperature thermal conductivities are (84±17) W/mK and (59±18) W/mK, respectively. For 2L MoS 2 and MoSe 2 , we obtain values of (77±25) W/mK and (42±13) W/mK. Crucially, the interfacial thermal conductance is found to be of order 0.1-1 MW/m 2 K, substantially smaller than previously assumed, a finding that has important implications for design and modeling of electronic devices.