This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.

This paper compares charge transport across self-assembled monolayers (SAMs) of nalkanethiol containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag TS ) surfaces supported the SAMs, while top-electrodes of eutectic galliumindium (EGaIn) contacted the SAMs to form metal/SAM//oxide/EGaIn junctions. TheEGaIn spontaneously reacts with ambient oxygen to form a thin (~ 2 nm) oxide layer.This oxide layer enabled EGaIn to maintain a stable, conical shape (convenient for forming microcontacts to SAMs) while retaining the ability to deform and flow upon contacting a hard surface. Conical electrodes of EGaIn conform (at least partially) to 2 SAMs, and generate high yields of working junctions. Ga 2 O 3 /EGaIn top electrodes enable the collection of statistically significant numbers of data in convenient periods of time. The observed difference in charge transport between n-alkanethiols with odd-and even-numbers of methylenes -the "odd-even effect" -is statistically discernable using these junctions, and demonstrates that this technique is sensitive to small differences in the structure and properties of the SAM. Alkanethiols with an even number of methylenes exhibit the expected exponential decrease in current density (J) with increasing chain length, as do alkanethiols with an odd number of methylenes. This trend disappears, however, when the two datasets are analyzed together; alkanethiols with an even number of methylenes typically show higher J than homologous alkanethiols with an odd number of methylenes. The precision of the present measurements, and the statistical power of the present analysis, were only sufficient to identify, with statistical confidence, the difference between an odd and even number of methylenes with respect to J, but not with respect to the tunneling decay constant, β, or the pre-exponential factor, J 0 .3

Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) performance discontinuities at well-defined growth temperatures. The changes reflect the higher chain mobility of the dielectric in its rubbery state and are independent of dielectric film thickness. Optimization of organic TFT performance must recognize this fundamental buried interface viscoelasticity effect, which is detectable in the current-voltage response.

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Tunneling junctions having the structure Ag TS −S(CH 2 ) n−1 CH 3 // Ga 2 O 3 /EGaIn allow physical−organic studies of charge transport across selfassembled monolayers (SAMs). In ambient conditions, the surface of the liquid metal electrode (EGaIn, 75.5 wt % Ga, 24.5 wt % In, mp 15.7°C) oxidizes and adsorbs-like other high-energy surfaces-adventitious contaminants. The interface between the EGaIn and the SAM thus includes a film of metal oxide, and probably also organic material adsorbed on this film; this interface will influence the properties and operation of the junctions. A combination of structural, chemical, and electrical characterizations leads to four conclusions about Ag TS −S(CH 2 ) n−1 CH 3 // Ga 2 O 3 /EGaIn junctions. (i) The oxide is ∼0.7 nm thick on average, is composed mostly of Ga 2 O 3 , and appears to be self-limiting in its growth. (ii) The structure and composition (but not necessarily the contact area) of the junctions are conserved from junction to junction. (iii) The transport of charge through the junctions is dominated by the alkanethiolate SAM and not by the oxide or by the contaminants. (iv) The interface between the oxide and the eutectic alloy is rough at the micrometer scale. ■ INTRODUCTIONWe, and others, are developing procedures with which to study charge transport across self-assembled monolayers (SAMs). 1−32We have explored two systems, both based on electrodes made of liquid metals (Hg, and a eutectic alloy of gallium and indium, which we abbreviate as EGaIn) and focused on the latter. The latter system has two major components: (i) a SAM supported by a template-stripped silver (Ag TS ) electrode and contacted by (ii) a "top" electrode of EGaIn (75.5 wt % Ga, 24.5 wt % In, mp 15.7°C 33 ) that is a liquid at room temperature and covered with a thin metal oxide film; we refer to these junctions by a nomenclature defined earlier 1 as Ag TS −SR//Ga 2 O 3 /EGaIn, where R is an organic group (which may range in structure from simple n-alkyl groups to more complex functionalities, e.g., aromatics 28 or ferrocenes 13,34,35 ). These junctions are typically formed, characterized, and used in contact with ambient laboratory atmosphere. In these conditions, the surface of EGaIn oxidizes rapidly and spontaneously (for convenience we indicate the composite structure-oxide skin and metal electrode-as "Ga 2 O 3 / EGaIn") and it-as do all other surfaces-adsorbs adventitious contaminants (e.g., water, organic molecules, particles). The electrical resistance, thickness, and heterogeneity of the composite films of metal oxide and contaminants on the surface (and their variability from electrode to electrode, and from junction to junction) have not been characterized: the most serious ambiguity affecting the measurement of charge transport through Ag TS −SR//Ga 2 O 3 /EGaIn junctions is currently the effect of the oxide skin and adventitious contaminants.