Because it allows the production of substantial quantities of large area, uniformly shaped substrates of normalGaP , the Liquid Encapsulated Czochralski technique is a major advance in normalGaP technology. Successful growth of single‐crystal ingots requires maintenance of visibility of the growth interface. This is accomplished by baking out the B2O3 encapsulant before use, tightly packing the polycrystalline normalGaP charge into the bottom of the crucible before growth, locating the center of heat at the bottom of the crucible, and keeping the B2O3 relatively hot during growth. The resulting ingots have uniformly high Hall mobilities, generally being at least as high as those reported for normalGaP grown by other techniques. The central regions of the ingots have dislocation densities ≤1×105 cm−2 . Effective distribution coefficients for S, Se, Te, and Zn have been found to be 0.23±0.08,0.16±0.05,0.012±0.003,normaland 0.096±0.05 , respectively.

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