Using single-walled carbon nanotubes homogeneously coated with ferromagnetic metal as ultra-high resolution magnetic force microscopy probes, we investigate the key image formation parameters and their dependence on coating thickness. The crucial step of introducing molecular beam epitaxy for deposition of the magnetic coating allows highly controlled fabrication of tips with small magnetic volume, while retaining high magnetic anisotropy and prolonged lifetime characteristics. Calculating the interaction between the tips and a magnetic sample, including hitherto neglected thermal noise effects, we show that optimal imaging is achieved for a finite, intermediate-thickness magnetic coating, in excellent agreement with experimental observations. With such optimal tips, we demonstrate outstanding resolution, revealing sub-10 nm domains in hard magnetic samples, and non-perturbative imaging of nanoscale spin structures in soft magnetic materials, all at ambient conditions with no special vacuum, temperature or humidity controls.

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect-reversible upon exposing graphene to air-is significant, as doping rates can largely exceed 10(12) cm(-2) h(-1), depending on pressure and the relative position of the gauge and the graphene device. It is important to be aware of this phenomenon, as its basic manifestation can be mistakenly interpreted as vacuum-induced desorption of p-dopants.

A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.