Recently developed myostatin (MSTN) mutant quail and chickens demonstrated similar effects of MSTN on muscle and fat developments between avian and mammalian species. However, the effect of MSTN mutation on the quality of eggshells, an important avian specific characteristic, has not yet been investigated although egg production traits of mutant quail have been studied. In this study, several parameters for eggshell quality, including eggshell size, eggshell weight, eggshell breaking strength (EBS), and eggshell thickness, were all compared between MSTN mutant and wild-type (WT) eggs. MSTN mutant eggs had greater height and width along with heavier eggshell weight compared to WT eggs, which shows proportional improvement in egg size as affected by the MSTN mutation. However, EBS and eggshell thickness were decreased in mutant eggs compared to WT eggs. In addition, the palisade layer, the thickest and most important layer for the strength of an eggshell, was also decreased without a change in the number of vesicular holes. These data indicated that decreases in the thickness of the eggshell and the palisade layer would be a main factor contributing to a lower EBS in mutant eggs. MSTN mutant quail provide a useful model to better understand the function of MSTN on avian uterine cell development and eggshell biomineralization.

Growths of monoclinic (AlxGa1−x)2O3 thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3 thin films on (010), (100), and (01) β‐Ga2O3 substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3 films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3 films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and (01) β‐Ga2O3 substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3 films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3 films grown on (01) β‐Ga2O3 show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3 grown on (100) Ga2O3 are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3 films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices.

Beta-gallium oxide ( β-Ga2O3) has recently attracted significant attention as an outstanding candidate for ultra-wide bandgap applications due to its unique advantages. Point and extended defects in β-Ga2O3 can significantly reduce the net doping and play an essential role with their functionality in advancing β-Ga2O3 device performance. It is, therefore, critical to gain an atomic level understanding of the structure of the defects and how they correlate to important properties of defects in β-Ga2O3. In this Perspective, we provide an overview of the recent characterization works involving scanning transmission electron microscopy and related techniques revealing the detailed structure of various point and extended defects in β-Ga2O3 and β-(AlxGa1−x)2O3 heterostructures. This article aims to offer insight into how defects determine important aspects of the material, such as in crystal growth, dopant incorporation and activation, and phase stability. The new information that we summarize here is expected to help achieve atomic scale control of defects in β-Ga2O3 materials and devices for development of the next generation power electronics applications.